| (1) | 'Bloch k-selective resonant inelastic scatting of hard X-rays at valence electrons of Ni in NiAl', H.Enkisch, A.Kaprolat, W.Schülke, M.H.Krisch, M.Lorenzen, Phys.Rev.B 60, p 8624 (1999). |
| (2) | 'Electronic states of metals and alloys investigated by high-resolution Bloch k-selective X-ray Raman scattering', A. Kaprolat, H.Enkisch, M.H.Krisch, and W.Schülke, in X-ray and Inner Shell Processes, 18th International Conference, Chicago, Illinois, AIP Conference Proceeding 506, 327-335, 2000. |
| (3) | 'Resonant Inelastic Scattering of X-rays from NiAl: Bloch k-selectivity',H.Enkisch, A.Kaprolat, W.Schülke ,M.H.Krisch, M.Lorenzen, J.Phys.Chem.Solids 61, p 449 (2000). |
| (4) | 'Momentum-transfer dependence of x-ray Raman scattering st the Be K-edge', C.Sternemann, M.Vollmer, J.A.Soininen, H.Nagasawa, M.Paulus, H.Enkisch, G.Schmidt, M.Tolan, and W.Schülke, Phys.Rev.B 68, 03511 (2003). |
| (5) | '3d spectator hole satellites of the Cu Kb1,3 abd Kb2,5 emission spectrum', H.Enkisch, C.Sternemann, M.Paulus, M.Vollmer, and W.Schülke, Physical Review. A, 2004; 70 (2). |
| (6) | 'EUV Lithography: technology for the semiconductor industry in 2010', H.Enkisch and J.Trenkler, Europhysics News (2004) Vol. 35 No. 5. |